single igbt nfm-series module 400 amperes/1200 volts CM400HC-24NFM powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 02/07 outline drawing and circuit diagram description: powerex nfm igbt modules are designed for use in hard switching (15-30 khz) applica - tions. each module consists of one igbt transistor in a single confguration with a reverse-con - nected super-fast recovery free- wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offer - ing simplifed system assembly and thermal management. features: low drive power low e sw(off) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: power supplies ups battery powered supplies induction heating ordering information: example: select the complete part module number you desire from the table below -i.e. CM400HC-24NFM is a 1200v (v ces ), 400 ampere single igbt power module. type current rating v ces amperes volts (x 50) cm 400 24 e c a d e q p n j m l k t u (2 typ .) v (4 typ .) f c b h g e g s r w w c e g e dim. inches millimeters a 4.25 108.0 b 2.44 62.0 c 1.016 25.8 d 3.660.01 93.00.25 e 3.15 80.0 f 0.79 20.0 g 0.94 24.0 h 0.79 20.0 j 1.14 29.0 k 0.80 20.4 l 1.38 35.0 dim. inches millimeters m 1.89 48.0 n 0.94 24.0 p 0.23 6.0 q 0.85 21.5 r 0.14 3.5 s 0.96 24.4 t 1.45+0.04/-0.02 36.8+1.0/-0.5 u m6 m6 v 0.26 dia. 6.5 dia. w 0.62 15.8
CM400HC-24NFM single igbt nfm-series module 400 amperes/1200 volts 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 02/07 absolute maximum ratings, t j = 25 c unless otherwise specifed ratings symbol CM400HC-24NFM units junction temperature t j C40 to 150 c storage temperature t stg C40 to 125 c collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current i c 400 amperes peak collector current i cm 800* amperes emitter current** i e 400 amperes peak emitter current** i em 800* amperes maximum collector dissipation*** (t c = 25c)**** p c 2710 watts mounting torque, m6 main terminal 40 in-lb mounting torque, m6 mounting 40 in-lb mounting torque, g(e) terminal m4 15 in-lb weight 370 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 volts static electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 40ma, v ce = 10v 4.5 6.0 7.5 volts collector-emitter saturation voltage***** v ce(sat) i c = 400a, v ge = 15v, t j = 25c 3.0 4.5 volts i c = 400a, v ge = 15v, t j = 125c 3.0 volts total gate charge q g v cc = 600v, i c = 400a, v ge = 15v 1800 nc emitter-collector voltage** v ec i e = 400a, v ge = 0v 2.0 3.0 volts dynamic electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units input capacitance c ies 63 nf output capacitance***** c oes v ce = 10v, v ge = 0v 5.3 nf reverse transfer capacitance c res 1.2 nf inductive turn-on delay time t d(on) 300 ns load rise time t r v cc = 600v, i c = 400a, 100 ns switch turn-off delay time t d(off) v ge1 = v ge2 = 15v, r g = 0.78 , 500 ns time fall time t f inductive load 60 200 ns diode reverse recovery time** t rr switching operation, 120 200 ns diode reverse recovery charge** q rr i e = 400a 24 c *pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). ***junction temperature (t j ) should not increase beyond 150c. ****t c , t f measured point is just under the chips. *****pulse width and repetition rate should be such as to cause neglible temperature rise.
CM400HC-24NFM single igbt nfm-series module 400 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 02/07 thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt 1/2 module, 0.046 c/w t c measured point just under chips thermal resistance, junction to case r th(j-c) d per fwdi 1/2 module, 0.07 c/w t c measured point just under chips contact thermal resistance, r th(c-f) per 1/2 module, thermal grease applied 0.02 c/w case to fin external gate resistance r g 0.78 7.8 collector-emitter voltage, v ce , (volts) capacitance, c ie s , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 3 10 2 10 1 10 0 10 -1 10 1 0 1 3 2 10 0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 3 emitter current, i e , (amperes) collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 5 4 3 0 200 400 600 2 1 0 800 v ge = 15v t j = 25 c t j = 125 c v ge = 0v c ie s c oes c re s collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) output characteristics (typical) 0 2 4 6 8 10 0 v ge = 20v 10 12 15 13 9 8 t j = 25 c 200 400 600 800 10 -1 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 0 10 1 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0.78 ? t j = 125 c inductive load t f 10 3 t j = 25 c t j = 125 c v ge = 0v emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 10 2 10 1 reverse recovery current, i rr , (amperes) v cc = 600v v ge = 15v r g = 0.78 ? t j = 125 c inductive load 10 3 i rr t rr
CM400HC-24NFM single igbt nfm-series module 400 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 02/07 time, (s ) transient thermal impedance characteristics (igbt & fwdi) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25 c under the chip per unit base = r th(j-c) = 0.46 c/w (igbt) r th(j-c) = 0.07 c/w (fwdi) normalized transient thermal impedance, z th(j-c' ) gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 15 10 5 0 400 800 2000 1200 1600 v cc = 600v v cc = 400v i c = 400a collector current, i c , (amperes) switching loss, e (on) , e (off) , (mj/pulse) 10 2 10 1 10 2 10 1 10 0 v cc = 600v v ge = 15v r g = 0.78 ? t j = 125 c inductive load v cc = 600v v ge = 15v i c = 400a t j = 125 c inductive load 10 3 switching loss vs. collector current (typical) gate resistance, r g , ( ? ) switching loss, e on , e off , (mj/pulse) 10 2 10 0 10 1 10 1 10 0 10 2 switching loss vs. gate resistance (typical) e on e of f collector current, i c , (amperes) switching loss, e rr , (mj/pulse) 10 2 10 1 10 2 10 1 10 0 v cc = 600v v ge = 15v r g = 0.78 ? t j = 125 c inductive load 10 3 reverse recovery switching loss vs. collector current (typical) e on e of f v cc = 600v v ge = 15v i c = 400a t j = 125 c inductive load gate resistance, r g , ( ? ) switching loss, e rr , (mj/pulse) 10 2 10 0 10 1 10 1 10 0 10 2 reverse recovery switching loss vs. gate resistance (typical)
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